The task of validating RF transistor, RF circuit, and RF amplifier designs through simulation techniques can become an extremely complicated and time-consuming activity, due to the non-linear and self-heating effects associated with high power RF. Despite these difficulties, however, the provision of RF power device models is still becoming an industry expectation.

dBm Engineering has developed and continues to refine a set of advanced measurement and simulation methodologies for use in the accurate and rapid design of RF power circuits and devices.

Simulation Service Areas

RF Circuit Simulation

dBm Engineering employs a wide range of case-specific simulation techniques that have demonstrated success in producing accurate simulated vs. measured responses for a variety of circuits. Circuit simulation areas include:

• Impedance matching networks
• Bias circuits
• Harmonic termination
• Impedance de-embedding
• Passive circuits -- power dividers, couplers, etc.

Electro-Magnetic Simulation

EM simulation is an integral part of dBm simulation methodologies. Distributed networks (microstrip, stripline, coplanar waveguide, etc.) are simulated using Agilent Momentum, and then integrated into larger hierarchical simulations to achieve a higher level of accuracy than can be provided by circuit simulation alone.