RF Glossary

RF Power Engineering Glossary

| A | B | C | D | E | F | G | H | I | J | K | L |
| M | N | O | P | Q | R | S | T | U | V | W |

A

ACPR
Adjacent channel power ratio

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B

Base Station
Ground-based transmit and receive system (as in a cellular telephone cell site)

BER
Bit error rate

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C

CDMA
Code division multiple access

CW
Continuous wave; refers to an unmodulated sine-wave signal

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D

dBm
Power level relative to 1mV rms

Device
Discrete packaged transistor

Die
Active semiconductor chip inside a packaged device
(e.g., Silicon, Gallium Arsenide, etc.)

DPSK
Differential phase-shift keying

DQPSK
Differential quadrature phase-shift keying

DUT
Device under test

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E

ECM
Electronic counter-measure

EM
Electromagnetic

EW
Electronic warfare

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F

FET
Field-effect transistor

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G

Gain
Ratio of output power divided by input power
(usually expressed in decibels or dB)

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H

Harmonic
Integer multiples of the fundamental frequency of interest commonly produced by a non-linear amplifier

Harmonic Tuning
Impedance-matching at the harmonic frequencies for
enhanced performance (i.e., efficiency)

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I

Impedance
Specifies the ratio of voltage to current (defined as a
complex number R+jX in units of Ohms)

IP3
Third order input intercept point

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J

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K

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L

LDMOS
Laterally-diffused metal oxide semiconductor

Linearity
Describes how closely an output signal is to a perfectly scaled multiple of a corresponding input signal

Load Pull
Automated measurement of RF performance of a device under test (at a constant frequency) by varying the source and load impedance presented to the device

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M

Microwave
The range in the electromagnetic spectrum from 300 MHz to
30 GHz (with corresponding wavelengths from 100 cm to 1 cm)

MOSFET
Metal oxide semiconductor field-effect transistor

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N

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O

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P

Package
Leaded assembly (inside of which one or more die is mounted and connected) for use in larger circuits

Power Amplifier
A class of amplifiers that have the primary purpose of
delivering high output power (usually accompanied by
significant dissipated power)

Pulsed Radar
A transmit and receive system used for ranging and detection that transmits a train of short bursts of high microwave signals and receives return signals reflected from a target

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Q

Q
Quality factor; a measure of stored energy/dissipated energy. Also a measure of bandwidth

QAM
Quadrature amplitude modulation

QPSK
Quadrature phase-shift keying

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R

RF
The range in the electromagnetic spectrum loosley defined
from 30 MHz to 3 GHz (with corresponding wavelengths from 1000 cm to 10 cm)

RF Power
A class of engineering -- circuits and signals primarily
concerned with power levels ranging from a few watts to
tens of thousands of watts in the RF spectrum.

RF Power Transistor
A discrete packaged transistor used in the amplification of
RF power

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S

SNR
Signal-noise ratio

SS-CDMA
Spread spectrum code division multiple access

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T

TDM
Time division multiplexing

TDMA
Time division multiple access

Thermal Impedance
Relates the temperature rise for a given dissipated power (which employs an analogy to the voltage-current relationship of impedance)

TOI
Third order intercept point

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U

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V

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W

W-CDMA
Wideband code division multiple access. Typically defined
with 5 MHz channels and 3.84 MHz carrier signals

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RF design
transistor testing
RF power transistor
RF amplifier design
RF amplifier design

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